NDLI: Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

Content Provider	IEEE Xplore Digital Library
Author	Kolhatkar, J.S. Vandamme, L.K.J. Salm, C. Wallinga, H.
Copyright Year	2003
Description	Author affiliation: MESA Res. Inst., Univ. of Twente, Netherlands (Kolhatkar, J.S.)
Abstract	The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from random telegraph signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched 'off'. The technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms has been reported in the literature. This procedure is then used for analysing the 'noisy' RTS along with the device background noise, which turned out to be 1/f noise. The 1/f noise of the device can then be separated from the RTS using this procedure. In this work, RTS observed in MOSFETs, under both constant and switched biased conditions, have been investigated in the time domain, Further, the 1/f noise in both the constant and the switched biased conditions is investigated.
Sponsorship	IEEE EDS Infineon Technol. ATMEL Tower Semiconductor Ltd
Starting Page	549
Ending Page	552
File Size	297784
Page Count	4
File Format	PDF
ISBN	0780379993
DOI	10.1109/ESSDERC.2003.1256935
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-16
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Telegraphy MOSFETs Semiconductor device noise Low-frequency noise Time measurement Histograms Frequency Signal analysis Background noise Noise measurement
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A Procedure For Extracting 1/f Noise From Random Telegraph Signals

A procedure for extracting 1/f noise from random telegraph signals.

Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs

Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

Separation of Random Telegraph Signals from 1/f Noise (2003)

1/f Noise and RTS(Random Telegraph Signal) Errors in Sense Amplifiers

Random telegraph noise in highly scaled nMOSFETs

Separation of Random Telegraph Signals from 1/f Noise (2003)

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

Similar Documents

A Procedure For Extracting 1/f Noise From Random Telegraph Signals

A procedure for extracting 1/f noise from random telegraph signals.

Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs

Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

Separation of Random Telegraph Signals from 1/f Noise (2003)

1/f Noise and RTS(Random Telegraph Signal) Errors in Sense Amplifiers

Random telegraph noise in highly scaled nMOSFETs

Separation of Random Telegraph Signals from 1/f Noise (2003)

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise

Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions