NDLI: A practical method to extract the thermal resistance for heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Pfost, M. Kubrak, V. Brenner, P.
Copyright Year	2003
Description	Author affiliation: Infineon Technol. AG, Munich, Germany (Pfost, M.; Kubrak, V.; Brenner, P.)
Abstract	Self-heating of bipolar transistors can lead to a significant increase of their junction temperature. This must be correctly considered for accurate modeling and also to ensure reliability. Because of this, several measurement techniques for thermal resistance extraction were proposed in the literature. However, a drawback of most methods is that they require measurements at different ambient temperatures for each device. This is very tedious if a large number of different transistors must be investigated. Therefore, we present a new technique that allows extraction of the thermal resistance from simple measurements carried out at only one ambient temperature, based on previously determined technology-specific data. Moreover, as a byproduct, the emitter resistance is estimated. The validity of this method is demonstrated here for SiGe HBTs, but it has also been used successfully for GaAs HBTs.
Sponsorship	IEEE EDS Infineon Technol. ATMEL Tower Semiconductor Ltd
Starting Page	335
Ending Page	338
File Size	313058
Page Count	4
File Format	PDF
ISBN	0780379993
DOI	10.1109/ESSDERC.2003.1256882
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-16
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal resistance Heterojunction bipolar transistors Temperature Electrical resistance measurement Bipolar transistors Measurement techniques Data mining Silicon germanium Germanium silicon alloys Gallium arsenide
Content Type	Text
Resource Type	Article

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