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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | van Liempd, B. Ariumi, S. Martens, E. Shih-Hung Chen Wambacq, P. Craninckx, J. |
| Copyright Year | 2015 |
| Description | Author affiliation: imec, Leuven, Belgium (van Liempd, B.; Martens, E.; Shih-Hung Chen; Craninckx, J.) || Dept. of Electron. & Inf. (ETRO), Vrije Univ. Brussel, Brussels, Belgium (Wambacq, P.) |
| Abstract | IM3-cancellation is a popular technique in LNAs to achieve very high linearity, but is also very sensitive to the exact device (bias) operating point. A 0.7-1.15GHz complementary common-gate LNA in 0.18μm silicon-on-insulator CMOS is presented that achieves good out-of-band (OOB) linearity without IM3-cancellation. Measurements of the $0.9mm^{2}$ prototype show a gain of >7dB, an NF of <;2.3dB, more than +15dBm OOB-IIP3 and over 0dBm B1dB. Compared to other work, this LNA has a similar or better linearity at only 10mW. The LNA uses a nominal supply of 2.5V, but was tested up to 3.7V and showed no significant degradation of its linearity for ±400mV supply variations. A power clamp, designed to enable testing at higher core supply voltage, withstands a >2.6kV HBM discharge, while the overall circuit is protected for >1kV HBM discharges. |
| Starting Page | 164 |
| Ending Page | 167 |
| File Size | 496143 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467374705 |
| ISSN | 19308833 |
| e-ISBN | 9781467374729 |
| DOI | 10.1109/ESSCIRC.2015.7313854 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-09-14 |
| Publisher Place | Austria |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Linearity Electrostatic discharges CMOS integrated circuits Clamps Noise measurement Discharges (electric) Radio frequency electrostatic discharges Low-noise amplifiers silicon-on-insulator CMOS nonlinear distortion |
| Content Type | Text |
| Resource Type | Article |
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