NDLI: CMOS sensor array with cell–level analog–to–digital conversion for local probe date storage

Content Provider	IEEE Xplore Digital Library
Author	Loeliger, T. Bachtold, P. Binnig, G.K. Cherubini, G. Durig, U. Eleftheriou, E. Vettiger, P. Uster, M. Jackel, H.
Copyright Year	2002
Description	Author affiliation: IBM Research, Zurich Research Laboratory, Rüschlikon, Switzerland (Loeliger, T.)
Abstract	A scalable CMOS sensing architecture for highly parallel readback of signals from large two-dimensional local probe arrays for AFM(atomic force microscope)-based data storage is presented. The main challenge to the detection scheme comes from the fact that information signals are superimposed on carrier signals that are more than three orders of magnitude higher. In addition, local memories are needed because of carrier variations, and parallel operation requires local data conversion. Therefore, analog-to-digital conversion of the probe signals is performed locally in a two-dimensional scheme fitting the probe array. A scalable prototype array fabricated in a 0.35 µm CMOS technology demonstrates the required functionality and performance for future large arrays of 32 × 32 or more AFM cantilevers.
Starting Page	623
Ending Page	626
File Size	235925
Page Count	4
File Format	PDF
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-24
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Non IEEE
Subject Keyword	Sensor arrays Probes Preamplifiers Memory Signal resolution Laboratories Analog-digital conversion CMOS technology Energy consumption Atomic force microscopy
Content Type	Text
Resource Type	Article

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