NDLI: An integrated 150 Vpp, 12 kV/ mu s class AB CRT-driving amplifier

Content Provider	IEEE Xplore Digital Library
Author	Blanke, P.G. Verdaasdonk, J.P.M.
Copyright Year	1989
Description	Author affiliation: Philips Res. Lab., Eindhoven, Netherlands (Blanke, P.G.; Verdaasdonk, J.P.M.)
Abstract	An integrated output amplifier with an output voltage swing of more than 150 V/sub pp/, a slew rate of 12 kV/ mu s, a large-signal bandwidth of 30 MHz, and a small-signal bandwidth exceeding 60 MHz is described. It is intended to drive the cathode of a cathode ray tube (CRT) in a projection television or a high-definition television (HDTV) set. The amplifier comprises a transadmittance stage followed by a feedback transimpedance amplifier. A zero in the feedback transfer allows the open-loop voltage gain of the transimpedance amplifier to have a -12-dB/octave slope at the unity loop-gain frequency. A zero in the transfer of the transadmittance stage results in a larger overall bandwidth than is possible in a conventional voltage-feedback configuration. The high-voltage DMOS technology which is used is based on a 10-mask bipolar process with double-sided p+ isolation and n+ collector diffusions. The 150-V/sub pp/ step response is shown. The rise and fall times are 11 and 12 ns, respectively, yielding slew rates of 13 and 12 kV/ mu s respectively. The overshoot is 12%. The small-signal (10 V/sub pp/) bandwidth, limited by the third pole of the transimpedance amplifier, exceeds 60 MHz. The large-signal (150-V/sub pp/) bandwidth, limited by slew rate, is 30 MHz.
Starting Page	206
Ending Page	207
File Size	447474
Page Count	2
File Format	PDF
DOI	10.1109/ISSCC.1989.48262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-02-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Feedback Bandwidth Frequency MOS devices Epitaxial layers Implants Parasitic capacitance Resistors Radiofrequency amplifiers
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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