NDLI: Non-local modeling of impact ionization for optimal device/circuit design in fully depleted SOI CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Krishnan, S. Fossum, J.G.
Copyright Year	1993
Description	Author affiliation: Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA (Krishnan, S.; Fossum, J.G.)
Abstract	Deep-submicron, thin fully depleted (TFD) SOI MOSFETs are potentially viable for future ULSI technology, and they also have potential applications in low-power circuits. However as they are aggressively scaled down, premature breakdown and off-state latch, attributed to the parasitic BJT driven by impact-ionization, threaten their viability. Reliable modeling of these effects requires a non-local analysis of impact ionization, as opposed to conventional local-field analyses that tend to over-predict the carrier generation rate. Furthermore, to study the mentioned effects at the circuit level, the models have to be compact while reflecting the underlying device physics. In this paper we describe the development and implementation of a non-local model for impact ionization in fully depleted SOI MOSFETs in both strong and weak inversion, and we discuss application of the device model in our predictive circuit simulator SOISPICE-2 to design optimization of scaled SOI CMOS.
Starting Page	114
Ending Page	115
File Size	167958
Page Count	2
File Format	PDF
ISBN	0780313461
DOI	10.1109/SOI.1993.344570
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impact ionization Predictive models MOSFETs Semiconductor device modeling Ultra large scale integration Electric breakdown Latches Physics Circuit simulation Design optimization
Content Type	Text
Resource Type	Article

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