NDLI: Effect of substrate rotation on the analog performance of triple-gate FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Pavanello, M.A. Martino, J.A. Simoen, E. Collaert, N. Claeys, C.
Copyright Year	2009
Description	Author affiliation: IMEC, Kapeldreef 75, B 3001 Leuven, Belgium (Simoen, E.; Collaert, N.; Claeys, C.) \|\| Centro Universitário da FEI, Av. Humberto de A. C. Branco, 3972, 09850-901 - São Bernardo do Campo - Brazil (Pavanello, M.A.) \|\| LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3 / 158, 05508-900 - Brazil (Martino, J.A.)
Abstract	In this work the influence of 45° substrate rotation on the analog performance of n-type and p-type FinFETs has been studied. It has been demonstrated that the substrate rotation improves the transconductance of narrow nFinFETs increasing the unity gain frequency. The output conductance of nFinFETs is weakly sensitive to substrate rotation. The improvement of the transconductance is marginally transferred to the voltage gain, leading to similar values for both substrate orientations. For the pFinFETs the substrate rotation strongly degrades the carrier mobility and hence the transconductance, independently if narrow or wide devices are used. This degradation affects also the transconductance over drain current ratio and the voltage gain of narrow devices is smaller by 3 dB with respect to standard substrate orientation.
Starting Page	1
Ending Page	2
File Size	343171
Page Count	2
File Format	PDF
ISBN	9781424442560
ISSN	1078621X
DOI	10.1109/SOI.2009.5318776
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFETs Intrusion detection Dielectric substrates Threshold voltage Degradation Electron mobility Tin Doping Large scale integration Nanoscale devices
Content Type	Text
Resource Type	Article

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