NDLI: Impact of the gate-to-body tunneling current on SOI history effect

Content Provider	IEEE Xplore Digital Library
Author	Fung, S.K.H. Zamdmer, N. Yang, I. Sherony, M. Shih-Hsieh Lo Wagner, L. Chen, T.-C. Shahidi, G. Assaderaghi, F.
Copyright Year	1999
Description	Author affiliation: SDRC, IBM Corp., Hopewell Junction, NY, USA (Fung, S.K.H.)
Abstract	The gate dielectric thickness has been aggressively scaled in recent technology generations. The thin gate dielectric is essential to maintain and improve the performance at reduced supply voltages and to control the short-channel effect. For very thin dielectrics, the gate tunneling current becomes noticeable. A component of this tunneling current is comprised of the body majority carriers tunneling from the body to the gate or vice versa. As a result, in SOI MOSFETs, the floating body potential and the history effect are affected by this current in addition to the diode leakage and impact ionization currents. In this paper, we study the impact of gate-to-body tunneling on SOI history effect for the first time.
Starting Page	122
Ending Page	123
File Size	155590
Page Count	2
File Format	PDF
ISBN	0780363892
ISSN	1078621X
DOI	10.1109/SOI.2000.892800
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling History Dielectrics Switches Diodes Threshold voltage Voltage control Circuit simulation MOSFET circuits Impact ionization
Content Type	Text
Resource Type	Article

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Impact of the gate-to-body tunneling current on SOI history effect

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