NDLI: Electron spin resonance characterization of Unibond(R) material

Content Provider	IEEE Xplore Digital Library
Author	Conley Jr., J.R. Lenhan, P.M. Wallace, B.D.
Copyright Year	1996
Description	Author affiliation: Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA (Conley, J.R., Jr.)
Abstract	Although recent studies of the electrical properties of Unibond(R) films have reported promising electrical characteristics, the physical nature of the defect structures responsible for the charge trapping properties of these films have not yet been studied via electron spin resonance (ESR). ESR provides structural information and allows testing of minimally processed structures making it an ideal tool for studying charge trapping in SiO/sub 2/ films. When combined with electrical measurements such as capacitance vs. voltage (CV), ESR studies can provide detailed information about the atomic scale defect structures that dominate the electronic properties of thin insulating films. An atomic scale understanding of the electronic properties can be an important guide for future development. In this abstract, we compare the ESR and CV response of Unibond(R) wafers to hole injection and VUV irradiation.
Starting Page	164
Ending Page	165
File Size	249871
Page Count	2
File Format	PDF
ISBN	0780333152
ISSN	1078621X
DOI	10.1109/SOI.1996.552545
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-09-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Paramagnetic resonance Atomic measurements Implants Electron traps Current measurement Charge measurement Wafer bonding Annealing Temperature Density measurement
Content Type	Text
Resource Type	Article

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