NDLI: Single pulse output of partially depleted SOI FETs

Content Provider	IEEE Xplore Digital Library
Author	Jenkins, K.A. Taur, Y. Sun, J.Y.-C.
Copyright Year	1996
Description	Author affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA (Jenkins, K.A.)
Abstract	Summary form only given. The floating body of partially depleted SOI FETs leads to variation of the threshold voltage, which, in turn, gives rise to variations of drain current depending on bias conditions and device history. This is apparent in the kink effect in I/sub D/-V/sub D/ output curves, and in various reports of transient effects. It has recently been shown that measured I-V curves are history dependent. Thus, for accurate circuit simulation, the history of the partially depleted SOI FET must somehow be taken into account. A method has been developed by which it is possible to measure drain currents, and full I-V curves, for single pulses. Using this technique, it is possible to obtain the device characteristics of any one of a series of pulses, thus accounting for the effect of the prior activity of a device on its output. The method is an extension of the technique which was previously developed for measuring I-V curves without self-heating. The basis of the technique is to apply a short pulse to the gate of the FET, measure the resulting voltage drop at the oscilloscope, and construct an I-V curve from a 50 ohm loadline. This measurement eliminates self-heating because of the short pulse length and low duty cycle. In the case of partially depleted FETs, this measurement method shows that I-V curves also depend on the period between pulses.
Starting Page	72
Ending Page	73
File Size	194644
Page Count	2
File Format	PDF
ISBN	0780333152
ISSN	1078621X
DOI	10.1109/SOI.1996.552499
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-09-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FETs Pulse measurements Sun Contracts Electron devices Meetings Timing Oscilloscopes Steady-state
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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