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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Peng Cong Ko, W.H. Young, D.J. |
| Copyright Year | 2004 |
| Description | Author affiliation: EECS Dept., Case Western Reserve Univ., Cleveland, OH, USA (Peng Cong; Ko, W.H.; Young, D.J.) |
| Abstract | A new single crystal silicon carbide MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 /spl mu/m thickness has been achieved over an oxidized silicon substrate using the proposed technique. TEM analyses of the silicon carbide thin film reveal single crystal characteristics, which is attractive for potential integration of MEMS devices with high-temperature microelectronics in the same structural layer for harsh environment applications. Implant-induced defect density in the silicon carbide can be substantially reduced to a negligible level through high-temperature annealing. Prototype single crystal 6H-SiC MEMS devices, such as resonators and actuators, have been successfully fabricated as demonstration vehicles for future harsh-environment micro-system implementation. |
| Starting Page | 1161 |
| Ending Page | 1164 |
| File Size | 741332 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780386922 |
| DOI | 10.1109/ICSENS.2004.1426383 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-10-24 |
| Publisher Place | Austria |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Micromechanical devices Fabrication Microelectromechanical devices Substrates Semiconductor thin films Thin film devices Microelectronics Annealing Prototypes |
| Content Type | Text |
| Resource Type | Article |
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