NDLI: Interface states in high temperature SiC gas sensing

Content Provider	IEEE Xplore Digital Library
Author	Ghosh, R.N. Tobias, P. Ejakov, S.G. Golding, B.
Copyright Year	2002
Description	Author affiliation: Center for Sensor Mater. Phys. & Astron. Building, Michigan State Univ., East Lansing, MI, USA (Ghosh, R.N.; Tobias, P.; Ejakov, S.G.; Golding, B.)
Abstract	Silicon carbide based metal-oxide-semiconductor (MOS) devices are attractive for gas sensing in harsh, high temperature environments. The response of catalytic gate SiC sensors to hydrogen-containing species has been assumed to be due to the formation of a dipole layer at the metal/oxide interface which gives rise to a voltage translation of the high frequency capacitance voltage (C-V) curve. We have discovered that high temperature (800 K) exposure to hydrogen results in (i) a flat band voltage occurring at a more negative bias than in oxygen and (ii) the transition from accumulation (high capacitance) to inversion (low capacitance) occurring over a relatively narrow voltage range. In oxygen, this transition is broadened indicating the creation of a large number of interface states. We interpret these results as arising from two independent phenomena - a chemically induced shift in the metal/semiconductor work function difference and the passivation/creation of charged states at the SiO/sub 2//SiC interface. MIS capacitance sensors typically operate in constant capacitance mode. These results. affect sensor sensitivity since the slope of the C-V curve changes dramatically with gas exposure.
Sponsorship	IEEE Sensor Council
Starting Page	1120
Ending Page	1125
File Size	597641
Page Count	6
File Format	PDF
ISBN	0780374541
DOI	10.1109/ICSENS.2002.1037271
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Interface states Temperature sensors Silicon carbide Capacitance Voltage Capacitance-voltage characteristics Capacitive sensors Chemical sensors Sensor phenomena and characterization Frequency
Content Type	Text
Resource Type	Article

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