NDLI: Sapphire-based capacitive pressure sensor for high temperature and harsh environment application

Content Provider	IEEE Xplore Digital Library
Author	Soeda, M. Kataoka, T. Ishikura, Y. Kimura, S. Masuda, T. Yoshikawa, Y. Nagata, M.
Copyright Year	2002
Description	Author affiliation: Micro Device Center, Yamatake Corp., Kanagawa, Japan (Soeda, M.; Kataoka, T.; Ishikura, Y.; Kimura, S.; Masuda, T.; Yoshikawa, Y.; Nagata, M.)
Abstract	Using sapphire for the sensor chip material, we developed a capacitive pressure sensor for a low-pressure range (0-5 kPa). The features of this sensor are oil-free, the capability of measurement in a highly corrosive medium and at high temperatures. The sensor chip is fabricated through investigations on the improvement in diaphragm size and the anisotropy of sapphire to reduce temperature dependent sensitivity and to make measurement at high temperatures possible. Sapphire etching, direct bonding, and other sapphire processing techniques are developed for the fabrication of the chip. As a result, an extremely low temperature-dependent sensitivity (0.001%F.S.//spl deg/C at 5-45/spl deg/C) without any thermal compensation is achieved. This shows the capability of accurate operation at high temperature such as hundreds /spl deg/C from ambient.
Sponsorship	IEEE Sensor Council
Starting Page	950
Ending Page	953
File Size	383283
Page Count	4
File Format	PDF
ISBN	0780374541
DOI	10.1109/ICSENS.2002.1037237
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Capacitive sensors Semiconductor device measurement Temperature dependence Temperature measurement Sensor phenomena and characterization Anisotropic magnetoresistance Size measurement Etching Bonding
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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