NDLI: Thermal stability evaluation of die attach for high brightness LEDs

Content Provider	IEEE Xplore Digital Library
Author	Guangchen Zhang Shiwei Feng Haitao Deng Jingwan Li Zhou Zhou Chunsheng Guo
Copyright Year	2011
Description	Author affiliation: School of Electrical Information & Control Engineering, Beijing University of Technology, Beijing, China (Guangchen Zhang; Shiwei Feng; Haitao Deng; Jingwan Li; Zhou Zhou; Chunsheng Guo)
Abstract	The long term thermal stability of the die attach is a crucial issue for high brightness light emitting diodes (HB LEDs), which affects the junction-to-case thermal resistance, luminous flux and life time seriously. In this paper, an improved power and temperature cycling method is proposed to evaluate the thermal stability of the die attach materials for HB LEDs. The structure function method is adopted to monitor the degradation of the die attach level thermal resistance during the cycling process instead of the traditional junction-to-case thermal resistance measurement, which provides more accurate, quick and intuitive results. The experimental results indicate that the forming of solder voids is the main degradation mechanism of the die attach for HB LEDs, which is also supported by the scan acoustic microscope (C-SAM) measurement. Comparing thermal stability of different die attach materials, Au/Sn eutectic soldered LED samples present better performance than Ag paste soldered samples in this experiment.
Starting Page	305
Ending Page	309
File Size	678529
Page Count	5
File Format	PDF
ISBN	9781612847405
ISSN	10652221
e-ISBN	9781612847368
DOI	10.1109/STHERM.2011.5767215
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-03-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microassembly Thermal resistance Thermal stability Light emitting diodes Thermal degradation Degradation Temperature measurement structure function Light emitting diode (LED) die attach
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Thermal Fatigue Characteristics of Die Attach Materials for Packaged High-Brightness LEDs

Degradation of the die attach layer in chip-on-board packaged light-emitting diodes during temperature cycling

Thermal management of high power LEDs: Impact of die attach materials

High quality & low thermal resistance eutectic flip chip LED bonding

Quick screen of thermal resistance for batching high brightness LEDs

Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs

Analysis of EOT characteristics of LED lamps

Characterization of Die-Attach Thermal Interface of High-Power Light-Emitting Diodes: An Inverse Approach

Analyses of propagation behavior of crack at interface between die-attach and Cu base and cracks' effects on reliability of high brightness light-emitting diode (LED)

Thermal stability evaluation of die attach for high brightness LEDs

Similar Documents

Thermal Fatigue Characteristics of Die Attach Materials for Packaged High-Brightness LEDs

Degradation of the die attach layer in chip-on-board packaged light-emitting diodes during temperature cycling

Thermal management of high power LEDs: Impact of die attach materials

High quality & low thermal resistance eutectic flip chip LED bonding

Quick screen of thermal resistance for batching high brightness LEDs

Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs

Analysis of EOT characteristics of LED lamps

Characterization of Die-Attach Thermal Interface of High-Power Light-Emitting Diodes: An Inverse Approach

Analyses of propagation behavior of crack at interface between die-attach and Cu base and cracks' effects on reliability of high brightness light-emitting diode (LED)

Thermal stability evaluation of die attach for high brightness LEDs