NDLI: Temperature mapping of metal interconnects using scanning thermoreflectance microscope

Content Provider	IEEE Xplore Digital Library
Author	Yang, Y. Asheghi, M.
Copyright Year	2005
Description	Author affiliation: Mech. Eng. Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA (Yang, Y.; Asheghi, M.)
Abstract	High spatial and temporal resolution thermometry techniques are needed to investigate the impact of temperature rise, distribution and gradients on the electrostatic discharge (ESD) and electromigration (EM) phenomena in microelectronic devices and interconnects. This paper presents a laser scanning thermoreflectance microscope capable of mapping the transient surface temperature rise of microdevices subjected to the brief electrical heating pulse. The calibration of the thermoreflectance coefficient is performed using a differential scheme and by performing electrical resistance thermometry in the same structure. The temperature profile along the suspended metal bridge subjected to electrical stress was obtained to demonstrate the feasibility of this approach to study the impacts of absolute temperature rise, as well as its gradient on the failure due to electromigration in interconnects.
Starting Page	298
Ending Page	302
File Size	762820
Page Count	5
File Format	PDF
ISBN	0780389859
ISSN	10652221
DOI	10.1109/STHERM.2005.1412195
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-03-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoreflectance Microscopy Electrostatic discharge Electromigration Spatial resolution Temperature distribution Microelectronics Surface discharges Surface resistance Surface emitting lasers
Content Type	Text
Resource Type	Article

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