NDLI: Base doping profile effect in SiGe heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Khanduri, G.M. Panwar, B.S.
Copyright Year	2004
Description	Author affiliation: Centre for Appl. Res. in Electron., Indian Inst. of Technol. Delhi, New Delhi, India (Khanduri, G.M.; Panwar, B.S.)
Abstract	The current gain and cut-off frequency performance in NPN Si/SiGe/Si double-heterojunction bipolar transistors (SiGe DHBTs) with two different base doping profiles (N/sub B/) has been analyzed. The simulation results for conventional uniform-N/sub B/ SiGe DHBT are compared with the proposed SiGe drift-DHBT (DrDHBT) having N/sub B/-ramp, while base Gummel number is kept constant in both the devices. The N/sub B/ ramp is controlled such that it minimizes the decelerating field component and a net accelerating field in quasi-neutral base of DrDHBT for minority electrons could be achieved. This increases the drift component of electron current in the quasi-neutral base, which gives rise to an increased current gain and improved cut-off frequency in DrDHBT depending on the value of drift-field parameter. Therefore, an optimized base doping profile could be implemented in place of uniform base doping for further improvement over uniform-N/sub B/ SiGe DHBTs.
File Size	730098
File Format	PDF
ISBN	0780386582
DOI	10.1109/SMELEC.2004.1620848
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-12-07
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping profiles Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Double heterojunction bipolar transistors Cutoff frequency Electrons Performance gain Bipolar transistors Performance analysis
Content Type	Text
Resource Type	Article

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