NDLI: A photoconductivity and Raman scattering analysis of boron-doped a-SiC:H films deposited using the electron cyclotron resonance plasma CVD method

Content Provider	IEEE Xplore Digital Library
Author	Yoon, S.F. Ji, R. Ahn, J. Milne, W.I.
Copyright Year	1996
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore (Yoon, S.F.)
Abstract	Hydrogenated amorphous silicon carbide films (a-SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of the microwave power on the deposition rate were studied, and variations in the photo and dark conductivities were investigated in conjunction with film analysis using the Raman scattering technique. The conductivity increases rapidly to a maximum, followed by rapid reduction at high microwave powers. The ratio of the photo to dark conductivity (/spl sigma//sub ph///spl sigma//sub d/) peaks at microwave powers of /spl sim/600 W. Under conditions of high hydrogen dilution and increasing microwave power, Raman scattering analysis showed evidence of the formation and increase of microcrystalline silicon and diamond-like components in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.
Starting Page	202
Ending Page	208
File Size	486992
Page Count	7
File Format	PDF
ISBN	0780333888
DOI	10.1109/SMELEC.1996.616482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-11-26
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photoconductivity Raman scattering Conductivity Semiconductor films Hydrogen Conductive films Amorphous silicon Electrons Cyclotrons Resonance
Content Type	Text
Resource Type	Article

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