NDLI: Burn-in problem on 0.5 /spl mu/m 1 MB SRAM-the role of barrier glue layer on the W plug

Content Provider	IEEE Xplore Digital Library
Author	Chan, C.M. Hisham, N. Soon, F.Y. Tatti, S. Widener, E.
Copyright Year	1996
Description	Author affiliation: Motorola, Selangor, Malaysia (Chan, C.M.)
Abstract	During the introduction phase of the new 0.5 /spl mu/m 1 MB SRAM, a severe problem was encountered during the burn-in process of this product. This product would draw high current which caused severe package blistering and even a melted socket. Failure analysis performed on the rejects discovered that cracks on the barrier layer prior to tungsten deposition are the root cause of the failure. In some rejects, abnormal contacts were observed underneath the cracks. The findings led us to believe that during tungsten deposition, chemical reaction takes place between WF/sub 6/ and exposed silicon underneath the glue crack. The abnormal contacts will in turn cause floating nodes in the circuitry that draw high current and eventually result in latch-up. A design of experiment on the glue process has been conducted in the wafer fab and an improved glue process has been implemented. The new process shows improvement in burn-in performance as well as product out-going quality.
Starting Page	89
Ending Page	92
File Size	460454
Page Count	4
File Format	PDF
ISBN	0780333888
DOI	10.1109/SMELEC.1996.616459
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-11-26
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Plugs Electron emission Scanning electron microscopy Tungsten Integrated circuit interconnections Performance analysis Leak detection Hot carrier injection
Content Type	Text
Resource Type	Article

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