NDLI: Molecular Origin of Conductivity Threshold in the Solid Electrolyte (Agglass

Content Provider	IEEE Xplore Digital Library
Author	Holbrook, C. Ping Chen Novita, D.I. Boolchand, P.
Copyright Year	2006
Description	Author affiliation: Department of Electrical and Computer Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221-0030, USA (Holbrook, C.)
Abstract	Electrical conductivity of Asglass $(10^{-16}Ohm$ $cm^{-1}),$ is typical of a wide band-gap semiconductor. However, upon chemical alloying the solid electrolyte AgS, the electrical conductivity of (Agglasses increase to display a step-like jump of nearly 5 orders of magnitude in the narrow composition range, 0.09 < x <0. 15 range. To elucidate the origin of this threshold behavior, we have now examined the molecular structure of (Agglasses over a wide range of compsitin 0 < x < 0.50 in modulated-Differential Scanning Calorimetry (MDSC) and Raman scattering experiments. The thermal measurements reveal the existence of a reversibility window in the 0.09 < x < 0.13 range, a result that suggests glasses at x <0.08 to be stressed-rigid while those at x > 0.13 to be elastically floppy. The MDSC results also reveal unimodal Ts at x < 0.08, but bimodal ones (low-T, high-T) at x > 0.12. The low-Tphase first appears once x >0.09, and its Tof 168 °C is quite similar to that of the stoichiometric glass at x = 0.50, or AgAsS. We identify the low-Tphase with a Ag-rich phase formed in these glasses once x >0.08. Furthermore, we identify the high-Tphase with the semiconducting Asglass phase elastically modified by AgS additive. This particular phase becomes rigid but stress-free in the reversibility window as some AgS is alloyed. At higher x, the high-Tphase becomes elastically floppy promoting $Ag^{+}ions$ to freely migrate.
Starting Page	508
Ending Page	511
File Size	2661727
Page Count	4
File Format	PDF
ISBN	1424400775
DOI	10.1109/NANO.2006.247699
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Conductivity Solids Glass Windows Wide band gap semiconductors Chemicals Alloying Displays Calorimetry Raman scattering Solid electrolyte glasses macroscopic phase separation modulated DSC
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Origin of Conductivity Threshold in the Solid Electrolyte Glass System: $( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$

Thermal, Electrical Transport, and Structural Characterization of (AgI)Glasses

Origin of conductivity threshold in the solid. (2007).

Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses

Raman scattering and electrical properties of Tl$_{x}$Cu$_{1−x}$GaSe$_{2}$ solid solutions

Polariton theory of resonant electronic Raman scattering on neutral donor levels in semiconductors with a direct band gap

Linking Melt Dynamics With Topological Phases and Molecular Structure of Sodium Phosphate Glasses From Calorimetry, Raman Scattering, and Infrared Reflectance

Ionic conductivity and mixed-ion effect in mixed alkali metaphosphate glasses

Molecular Origin of Conductivity Threshold in the Solid Electrolyte (Agglass

Similar Documents

Origin of Conductivity Threshold in the Solid Electrolyte Glass System: $( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$

Thermal, Electrical Transport, and Structural Characterization of (AgI)Glasses

Origin of conductivity threshold in the solid. (2007).

Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses

Raman scattering and electrical properties of Tl$_{x}$Cu$_{1−x}$GaSe$_{2}$ solid solutions

Polariton theory of resonant electronic Raman scattering on neutral donor levels in semiconductors with a direct band gap

Linking Melt Dynamics With Topological Phases and Molecular Structure of Sodium Phosphate Glasses From Calorimetry, Raman Scattering, and Infrared Reflectance

Ionic conductivity and mixed-ion effect in mixed alkali metaphosphate glasses

Molecular Origin of Conductivity Threshold in the Solid Electrolyte (Agglass