NDLI: Matrix model of spin transistor

Content Provider	IEEE Xplore Digital Library
Author	Kamboh, M.A. Chowdhry, B.S. Rajput, A.Q.K.
Copyright Year	2003
Description	Author affiliation: Inst. of Inf. Technol., MUET, Jamshoro, Pakistan (Kamboh, M.A.; Chowdhry, B.S.; Rajput, A.Q.K.)
Abstract	The model of spin transistor has been proposed in our paper, which not only can amplify spin-flow but also may perform logic operation and manipulate quantum information. The model is a square matrix of order 3 by 3; a quantum matrix consisting of nine quantum dots. Elements of column 1 must be made up of different semiconductors to produce dissimilar carrier precessions. Column 2 is a ferromagnetic semiconductor, which has to accept carriers from column 1. Column 3 is also ferromagnetic semiconductor, but its elements must match in characteristics with their respective elements in column 1. Magnetic tunnel junction separates column 2 and column 3. In column 1, spin-polarized electrons are made to precess with the application of magnetic field and then drove to column 2 by applying different electric fields to the quantum dots of column 1. In column 2, suppose one of the electrons has lost its precessional characteristics of column 1 because of weak electric field that pushed it in column 2 and adopts that of column 2. The magnetic tunnel junction between will compare polarizations of electrons between column 2 and column 3 and admit only those electrons whose spins are matched on both sides. Consequently, one quantum dot in column 3 does not get any electron and other dot whose characteristics bears a resemblance to column 2 may get two electrons. Hence an empty quantum dot will represent a logic '0' for the weak electric filed applied at column 1 and the quantum dot with twice number of electrons will show a logical '1' and spin-dependent-flow amplification.
Sponsorship	IEEE Nanotechnol. Council IEEE Region 6 Western USA
Starting Page	889
Ending Page	891
File Size	310905
Page Count	3
File Format	PDF
ISBN	0780379764
DOI	10.1109/NANO.2003.1231058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Quantum dots Polarization Magnetic tunneling Zinc compounds Logic Magnetic fields Magnetic materials Semiconductor materials Low voltage
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Spin polarization of electron current in semimagnetic semiconductor nanostructures

Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots

Voltage dependent spin tunneling and spin relaxation in spin-leds

Fast spin state initialization of a single quantum dot electron

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity

Electron spin splitting in polarization-doped III-nitrides

Quantum-coherent transport in coupled quantum-dots

Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor

Matrix model of spin transistor

Similar Documents

Spin polarization of electron current in semimagnetic semiconductor nanostructures

Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots

Voltage dependent spin tunneling and spin relaxation in spin-leds

Fast spin state initialization of a single quantum dot electron

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity

Electron spin splitting in polarization-doped III-nitrides

Quantum-coherent transport in coupled quantum-dots

Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor

Matrix model of spin transistor