NDLI: A low-cost, encapsulated flip-chip package on organic substrate for wideband gallium nitride (GaN) hybrid amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Pavlidis, S. Ulusoy, A.C. Khan, W.T. Papapolymerou, J.
Copyright Year	2014
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA (Pavlidis, S.; Ulusoy, A.C.; Khan, W.T.; Papapolymerou, J.)
Abstract	In this paper, the authors present an embedded, low-cost packaging technique for high power gallium nitride devices. The package is based on flip-chip bonding to achieve a reduced parasitic inductance, easing the design for wideband amplifiers. The backside of the gallium nitride devices is connected to a heat sink by a second flip-chip process to improve thermal management. When realized on a low-cost organic substrate material with poor thermal characteristics, measurement results show that the proposed packaging technique can still achieve performance levels comparable to devices packaged on expensive, high thermal conductivity substrate materials, such as aluminum nitride. These results demonstrate a low-cost, high-performance and near-hermetically sealed packaging solution for gallium nitride devices.
Sponsorship	IEEE Microwv. Theory Tech. Soc.
Starting Page	1
Ending Page	4
File Size	1060687
Page Count	4
File Format	PDF
ISBN	9781479938698
DOI	10.1109/MWSYM.2014.6848563
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heating Performance evaluation Logic gates Lasers Radio frequency III-V semiconductor materials hybrid amplifiers Gallium nitride HEMT flip-chip hybrid package ultra wideband (UWB) broadband encapsulation organics
Content Type	Text
Resource Type	Article

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