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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hung-Ting Chou Shin-Wei Chen Hwann-Kaeo Chiou |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan (Hung-Ting Chou; Shin-Wei Chen; Hwann-Kaeo Chiou) |
| Abstract | A novel wideband dual-feedback low noise amplifier (LNA) implemented in standard 0.18 μm CMOS process is proposed in this paper. The proposed dual feedback topology can improve the total noise contribution for LNA design. By exploiting the gate-inductive bandwidth gain-enhancement (GIBE) technique, the LNA can extend the more than 30 % bandwidth and enhance gain an overall bandwidth of DC to 5 GHz. Besides, the fabricated LNA with the current-mirror circuit consumes a power of 10.4 mW. The proposed LNA achieves an average gain of 13.9 dB and a minimum noise figure (NF) of 2.76 dB from DC to 5 GHz. The LNA achieves a good figure-of-merit (FoM) of 3.8. The chip area is 0.45 $mm^{2}$ with all pads and dummy blocks. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 230064 |
| Page Count | 3 |
| File Format | |
| ISSN | 0149645X |
| e-ISBN | 9781467361767 |
| DOI | 10.1109/MWSYM.2013.6697349 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gain Noise measurement CMOS integrated circuits Transistors Wideband Logic gates gate-inductive bandwidth gain-enhancement CMOS LNA feedback |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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