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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Thome, F. Massler, H. Wagner, S. Leuther, A. Kallfass, I. Schlechtweg, M. Ambacher, O. |
| Copyright Year | 2013 |
| Description | Author affiliation: Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany (Thome, F.; Massler, H.; Wagner, S.; Leuther, A.; Kallfass, I.; Schlechtweg, M.; Ambacher, O.) |
| Abstract | Two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110 GHz, respectively, are presented. The W-band amplifiers employ a three-stage design in a 50nm InGaAs mHEMT technology and were optimized for minimum DC power consumption, using 2×10 and 2×5 μm transistors. For optimum bias conditions the first amplifier achieved a linear gain of more than 16.4dB and a noise figure of less than 2.8 dB over the whole W-band, whereas the second amplifier operates in the frequency range between 80 to 110 GHz with a linear gain of over 14.5 dB and a noise figure of less than 3.3 dB. The best achieved noise figure is 2.1dB and the maximum gain is about 23dB. LNA 1 yields a noise figure of 3 dB and a gain of 8.9dB at an operation frequency of 106 GHz, whilst only consuming 0.9mW of DC power. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 183182 |
| Page Count | 4 |
| File Format | |
| ISSN | 0149645X |
| e-ISBN | 9781467361767 |
| DOI | 10.1109/MWSYM.2013.6697362 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Noise Gain Power demand mHEMTs MMICs W-band HEMTs low-noise amplifier low power electronics noise figure |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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