NDLI: 60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS

Content Provider	IEEE Xplore Digital Library
Author	Hsieh-Hung Hsieh Po-Yi Wu Chewn-Pu Jou Fu-Lung Hsueh Guo-Wei Huang
Copyright Year	2011
Description	Author affiliation: National Nano Device Laboratories, Hsinchu, Taiwan 300-78, R.O.C. (Guo-Wei Huang) \|\| Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan 300-77, R.O.C. (Hsieh-Hung Hsieh; Po-Yi Wu; Chewn-Pu Jou; Fu-Lung Hsueh)
Abstract	In this paper, a novel design technique of common-gate inductive feedback is presented for millimeter-wave low-noise amplifiers (LNAs). For this technique, by adopting a gate inductor at the common-gate transistor of the cascode stage, the gain of the LNA can be enhanced even under a wideband operation. Using a 65nm CMOS process, transmission-line-based and spiral-inductor-based LNAs are fabricated for demonstration. With a dc power consumption of 33.6 mW from a 1.2-V supply voltage, the transmission-line-based LNA exhibits a gain of 20.6 dB and a noise figure of 5.4 dB at 60 GHz while the 3dB bandwidth is 14.1 GHz. As for the spiral-inductor-based LNA, consuming a dc power of 28.8 mW from a 1.2-V supply voltage, the circuit shows a gain of 18.0 dB and a noise figure of 4.5 dB at 60 GHz while the 3dB bandwidth is 12.2 GHz.
Starting Page	1
Ending Page	4
File Size	249319
Page Count	4
File Format	PDF
ISBN	9781424482931
ISSN	15292517
e-ISBN	9781424482924
e-ISBN	9781424482917
DOI	10.1109/RFIC.2011.5940665
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gain CMOS integrated circuits Logic gates Noise measurement Wideband Inductors wideband CMOS RF common-gate inductive feedback gain enhancement low-noise amplifier (LNA) millimeter wave
Content Type	Text
Resource Type	Article

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