NDLI: 92–96 GHz GaN power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Micovic, M. Kurdoghlian, A. Margomenos, A. Brown, D. F. Shinohara, K. Burnham, S. Milosavljevic, I. Bowen, R. Williams, A.J. Hashimoto, P. Grabar, R. Butler, C. Schmitz, A. Willadsen, P. J. Chow, D. H.
Copyright Year	2012
Description	Author affiliation: HRL Laboratories LLC, 3011 Malibu Canyon Road, CA 90265, USA (Micovic, M.; Kurdoghlian, A.; Margomenos, A.; Brown, D. F.; Shinohara, K.; Burnham, S.; Milosavljevic, I.; Bowen, R.; Williams, A.J.; Hashimoto, P.; Grabar, R.; Butler, C.; Schmitz, A.; Willadsen, P. J.; Chow, D. H.)
Abstract	We report the test results of a family of 92-96 GHz GaN power amplifiers (PA) with increasing gate peripheries (150 µm to 1200 µm). The 1200 µm, 3-stage PA produces 2.138 W output power (Pout) with an associated PAE of 19% at 93.5 GHz (V=14V). The amplifier offers Pout over 1.5W with associated PAE over 17.8% in the 92–96 GHz bandwidth. The measured data show that the maximum Pout scales linearly with increasing gate periphery at an almost constant PAE around 20%. This demonstrates the high efficiency of on-chip power combining and enables W-band high power single chip solid state power amplifiers.
Starting Page	1
Ending Page	3
File Size	914287
Page Count	3
File Format	PDF
ISBN	9781467310857
ISSN	0149645X
e-ISBN	9781467310888
e-ISBN	9781467310864
DOI	10.1109/MWSYM.2012.6259572
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-17
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MMICs Logic gates Gallium nitride Molecular beam epitaxial growth Silicon compounds Gain power amplifiers millimeter wave integrated circuits
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

W-band GaN power amplifier MMICs

A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology

GaN-based millimeter-wave monolithic integrated circuits

W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

Design of highly-efficient GaN X-band-power-amplifier MMICs

Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs

5W GaN MMIC for Millimeter-Wave Applications

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

92–96 GHz GaN power amplifiers

Similar Documents

W-band GaN power amplifier MMICs

A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology

GaN-based millimeter-wave monolithic integrated circuits

W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

Design of highly-efficient GaN X-band-power-amplifier MMICs

Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs

5W GaN MMIC for Millimeter-Wave Applications

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

92–96 GHz GaN power amplifiers