NDLI: Broadband and low-loss Ruthroff-type transmission line transformer in integrated passive devices technology

Content Provider	IEEE Xplore Digital Library
Author	Hua-Yen Chung Yuan-Chia Hsu Hwann-Kaeo Chiou Da-Chiang Chang Ying-Zong Juang
Copyright Year	2012
Description	Author affiliation: National Chip Implementation Center, National Applied Research Laboratories, Hsinchu, Taiwan, R.O.C (Da-Chiang Chang; Ying-Zong Juang) \|\| Department of Electrical Engineering, National Central University, Jhongli, Taiwan, R.O.C. (Hua-Yen Chung; Yuan-Chia Hsu; Hwann-Kaeo Chiou)
Abstract	Two broadband, low-loss Ruthroff-type transmission line transformers (TLTs) that are implemented in integrated passive devices (IPD) technology and intended for use in IEEE 802.11b/g WLAN systems are presented in this paper. The TLTs are realized by spiral broadside-coupled lines with proper characteristic impedances to optimize the insertion loss and bandwidth. The measured minimum insertion losses of 1∶4 and 1∶9 TLTs are 0.5 dB at 2.2 GHz and 0.57 dB at 2.4 GHz, respectively. The correspondent 1-dB bandwidths of these TLTs are 175% and 140%. The chip areas of the TLTs are 0.27 $mm^{2}$ and 0.34 $mm^{2}.$
Starting Page	1
Ending Page	3
File Size	969969
Page Count	3
File Format	PDF
ISBN	9781467310857
ISSN	0149645X
e-ISBN	9781467310888
e-ISBN	9781467310864
DOI	10.1109/MWSYM.2012.6259408
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-17
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS integrated circuits Gallium arsenide Abstracts Indexes Windings CMOS technology Substrates transmission line transformer Broadband impedance transformer integrated passive device (IPD)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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