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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pei-Si Wu Tian-Wei Huang Huei Wang |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan (Pei-Si Wu; Tian-Wei Huang; Huei Wang) |
| Abstract | This paper presents the design and measurement results of a broadband high gain MMIC medium power amplifier. The proposed 18-71 GHz multiband amplifier provides a single chip solution for all 28 GHz, 38 GHz, and 60 GHz millimeter-wave applications with a chip size of 2.5 mm /spl times/ 1 mm. The high gain performance of more than 20 dB from 41-63 GHz has been attained. It provides at least 16 dBm of maximum output power from 19-57 GHz. This amplifier consists of one distributed stage for broadband design and cascaded single-ended stages for medium power output. This chip demonstrates the highest frequency application using this combined topology compared with all previously published results. The circuit was fabricated with a 0.15-/spl mu/m gate-length GaAs-based HEMT MMIC technology. |
| Starting Page | 863 |
| Ending Page | 866 |
| File Size | 255531 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780376951 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2003.1212506 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide MMICs High power amplifiers Broadband amplifiers Millimeter wave measurements Millimeter wave technology Power amplifiers Power measurement Gain measurement Semiconductor device measurement |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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