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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Copyright Year | 2003 |
| Abstract | A monolithic two stage high power amplifier (HPA) has been developed for X band applications. This amplifier is fabricated on UMS commercially available GaInP/GaAs HBT process. The MMIC HPA provides about 10 W output power from 8.4 to 10.4 GHz with a mean power added efficiency of about 35 % and a mean small signal gain of 16 dB. The HPA was also validated in a wide temperature range (-30 - +80/spl deg/C) from small to large input signal and for extensive frequencies. The most significant feature of the new HPA is the use of on-chip bias control circuit allowing a linear control of collector current independently of the temperature. |
| Starting Page | 855 |
| Ending Page | 858 |
| File Size | 328037 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780376951 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2003.1212504 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Heterojunction bipolar transistors High power amplifiers Circuits Temperature control Gallium arsenide MMICs Power generation Power amplifiers Gain Temperature distribution |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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