NDLI: Pulse current behavior in the presence of external magnetic field in radio frequency (RF)-inductively coupled plasma (ICP) quasi-direct current plasma immersion ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Tong, H.H. Fu, R.K.Y. Zeng, X.C. Chu, P.K.
Copyright Year	2002
Description	Author affiliation: Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China (Tong, H.H.; Fu, R.K.Y.; Zeng, X.C.; Chu, P.K.)
Abstract	Summary form only given, as follows. In plasma immersion ion implantation (PIII) processes to fabricate silicon-on-insulator (SOI) materials such as separation by plasma implantation of oxygen (SPIMOX) and ion cut/wafer bonding, long-pulse PIII (or quasi-direct current PIII) has been shown to be more superior than conventional pulsed-mode PIII. The new process reduces the amount of the implanted ions in the near surface as well as the processing time. Our former experiments on quasi-DC and DC PIII utilize a grounded conducting grid above the sample holder to avoid plasma extinction as the plasma sheath expands. Recently, we have been successful in achieving stable operation in the long-pulse PIII mode by making the distance between the sample holder and plasma source long and the plasma density relatively high. In order to intensify the plasma discharge and produce one dominant ion species in the plasma, a weak external magnetic field (B) is generated using magnetic coils around the vacuum chamber. It is observed that the discharge is enhanced but the pulse current waveforms are significantly changed with the addition of B as well. Our results further indicate that the pulse current varies with the pressure and pulse voltage. We also observe that the magnitude of the pulse current is reduced as the pulse voltage increases in some pressure ranges. This can probably be attributed to the variation of the plasma generation volume and ion motion in the expanded sheath at different pulse voltages.
Sponsorship	Plasma Sci. & Applictions Committee of the IEEE Nucl. & Plasma Sci. Soc
File Size	84367
File Format	PDF
ISBN	078037407X
DOI	10.1109/PLASMA.2002.1030539
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-26
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma immersion ion implantation Magnetic fields Radio frequency Couplings Plasma sheaths Plasma density Plasma sources Plasma materials processing Plasma stability Voltage
Content Type	Text
Resource Type	Article

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