NDLI: A failure analysis technique using the Nano Electrostatic field Probe Sensor (NEPS)

Content Provider	IEEE Xplore Digital Library
Author	Ito, S. Matsumoto, T.
Copyright Year	2013
Description	Author affiliation: Technol. Grop Konaka Electron., Ogaki, Japan (Ito, S.) \|\| Syst. Div., Hamamatsu Photonics K.K., Hamamatsu, Japan (Matsumoto, T.)
Abstract	The laser NEPS (Nano Electrostatic field Probe Sensor) method is one of the techniques to estimate a failing region by imaging the change of the carrier signal that occurs by irradiating the laser beam light to LSI under the non-contact and non-bias source analysis environment. In this announcement, the principle of the NEPS method is explained using a capacitive coupling model, and the laser irradiation position and the most suitable analysis condition of NEPS detecting position is clarified. In addition, the I/O terminal leak defect of the chip LSI products is analyzed by means of the NEPS method, and the result of detected abnormalities by the via contact and the meltdown of the silicon basal plate interface will be shown.
Starting Page	493
Ending Page	496
File Size	454036
Page Count	4
File Format	PDF
ISBN	9781479912414
ISSN	19461550
e-ISBN	9781479904808
DOI	10.1109/IPFA.2013.6599208
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes Laser beams Large scale integration Semiconductor lasers Failure analysis Substrates Radiation effects
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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