NDLI: Improved reliability of copper interconnects using alloying

Content Provider	IEEE Xplore Digital Library
Author	Gambino, J.P.
Copyright Year	2010
Description	Author affiliation: IBM Microelectronics, 1000 River Street, Essex Junction, VT, 05452, USA (Gambino, J.P.)
Abstract	As device dimensions and wire dimensions are reduced, it is desirable to increase the electromigration lifetime of Cu. A simple method to improve the electromigration lifetime is to dope the Cu with impurities, such as Al, Ag, Ti, or Mn, using an alloy seed layer. During subsequent anneals, the impurities segregate at grain boundaries and interfaces, including the critical interface between the Cu and the capping layer. The presence of the impurities at the interfaces reduces Cu diffusion, resulting in an enhancement of electromigration lifetimes of up to 10x. The main challenge with the use of alloy seed layers is the increase in resistivity caused by doping. With alloy seed layers, there is always a trade-off between increased reliability and increased resistivity.
Starting Page	1
Ending Page	7
File Size	489923
Page Count	7
File Format	PDF
ISBN	9781424455966
ISSN	19461542
e-ISBN	9781424455980
DOI	10.1109/IPFA.2010.5532242
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-05
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Alloying Electromigration Impurities Conductivity Wire Manganese alloys Aluminum alloys Copper alloys Titanium alloys Annealing
Content Type	Text
Resource Type	Article

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