NDLI: Electromigration resistant alternatives to aluminum-copper

Content Provider	IEEE Xplore Digital Library
Author	Armstrong, N.P. White, S.J. Isernhagen, R. Hefner, A. Mallardeau, C. Borel, G. Williams, H.A. Dulniak, R.J.
Copyright Year	1988
Description	Author affiliation: Plessey Res. Caswell Ltd., Northants, UK (Armstrong, N.P.; White, S.J.)
Abstract	Electromigration performance of a wide range of Al-based conductors has been investigated with two ends in view: (1) an alternative to Al/Cu without the disadvantages associated with Cu; and (2) a conductor with enhanced electromigration resistance. Al/Si/Ti or Al/Ti alloys may furnish the former, though care is required in the use of high (0.8-1%) Ti content as it leads to greatly enhanced whisker growth implying very early short-circuit failure. With system interactions or process compatibility also in view, simple two-layer and three-layer structures involving AlCu are shown to provide the optimum metal for four-layer metal at 3-4- mu m pitch, with TiW or CVD W as an underlayer, Al/Cu or possibly other alloys as main conductor, and Ti, W, or TiW as a cap. The effect of various passivation options has also been investigated. The present work was undertaken as part of the Esprit project Advanced Interconnect for VLSI.
Starting Page	460
Ending Page	468
File Size	888502
Page Count	9
File Format	PDF
DOI	10.1109/VMIC.1988.14226
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-06-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Artificial intelligence Silicon alloys Titanium alloys Copper alloys Current density Temperature Corrosion Microelectronics Aluminum alloys
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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