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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hsien-Nan Chiu Jyi-Tsong Lin Yi-Chuen Eng Po-Hiesh Lin Tzu-Feng Chang Chih-Hung Sun Hsuan-Hsu Chen Chih-Hao Kuo |
| Copyright Year | 2009 |
| Description | Author affiliation: Dept. of Electrical Engineering, National Sun Yat-Sen University, 70 Lien-Hai Rd. Kaohsiung 80424, Taiwan, China (Hsien-Nan Chiu; Jyi-Tsong Lin; Yi-Chuen Eng; Po-Hiesh Lin; Tzu-Feng Chang; Chih-Hung Sun; Hsuan-Hsu Chen; Chih-Hao Kuo) |
| Abstract | This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT. |
| Starting Page | 91 |
| Ending Page | 93 |
| File Size | 9162445 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424439119 |
| ISSN | 19461542 |
| DOI | 10.1109/IPFA.2009.5232692 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-07-06 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Oxidation Silicon Thin film transistors |
| Content Type | Text |
| Resource Type | Article |
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