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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ding Ruixue Yang Yintang Ren Xingrong Xi Xiaowen Zhang Bing |
| Copyright Year | 2009 |
| Description | Author affiliation: Schoole of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, Xi'an, 710071, China (Ding Ruixue; Yang Yintang; Ren Xingrong; Xi Xiaowen; Zhang Bing) |
| Abstract | Based on density functional theory (DFT), the effect of boron (B) doping concentration on band gap of 3C-SiC is investigated. The analysis of density of states (DOS) and electron distribution indicates that the band gap tends to narrow with the increase of B concentration. The top of valence band, is contributed from B 2p level, and the bottom of conduction band, from B 2s in B-doped 3C-SiC. Both of them shift towards lower energy direction. With B concentration increases, the displacement of the bottom of conduction band is larger than that of the top of valence band, resulting in the narrowing of band gap. This result is useful for controlling band gap of doped 3C-SiC, and should be helpful for enhancing reliability and broadening the application ranges of SiC devices. |
| Starting Page | 563 |
| Ending Page | 566 |
| File Size | 3405968 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424439119 |
| ISSN | 19461542 |
| DOI | 10.1109/IPFA.2009.5232584 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-07-06 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Boron Photonic band gap Silicon carbide Electrons Schottky diodes Doping Crystallization Microelectronics Laboratories Wide band gap semiconductors |
| Content Type | Text |
| Resource Type | Article |
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