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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kwang-Ho Ahn Dong-Jin Keum In-Hyo Rhyu Hyun-Seok Kim Yu-Beum Jeon Hwa-Yul Yoo Joo-Young Han Joon-Hyun Baek |
| Copyright Year | 2006 |
| Description | Author affiliation: Wireless Components & Telecommun. Res. Centerand Korea Electron. Technol. Inst., Gyeonggi-Do (Kwang-Ho Ahn; Dong-Jin Keum; In-Hyo Rhyu; Hyun-Seok Kim; Yu-Beum Jeon; Hwa-Yul Yoo; Joo-Young Han; Joon-Hyun Baek) |
| Abstract | This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively. |
| Starting Page | 189 |
| Ending Page | 194 |
| File Size | 288532 |
| Page Count | 6 |
| File Format | |
| ISBN | 9784902339086 |
| DOI | 10.1109/APMC.2006.4429406 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-12 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | IEICE of Japan |
| Subject Keyword | Silicon germanium Germanium silicon alloys Radio frequency Transceivers Integrated circuit noise Circuit testing Multiaccess communication Integrated circuit testing Low-noise amplifiers Radiofrequency amplifiers linearity SiGe BiCMOS LNA cellular CDMA transceiver noise figure |
| Content Type | Text |
| Resource Type | Article |
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