NDLI: A high linearity low noise amplifier in a 0.35/spl mu/m SiGe BiCMOS for WCDMA applications

Content Provider	IEEE Xplore Digital Library
Author	Chih-Wei Wang Yi-Bin Lee Tzu-Yi Yang
Copyright Year	2005
Description	Author affiliation: SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan (Chih-Wei Wang; Yi-Bin Lee; Tzu-Yi Yang)
Abstract	In this paper, a low noise amplifier (LNA) in a 0.35 /spl mu/m SiGe BiCMOS technology for WCDMA applications is presented. The designed LNA exhibits a noise figure of 1.65 dB and a power gain of 20 dB. Besides, two different base bias circuits are integrated in the LNA. One is a conventional resistor feed circuit, and the other is an active feed circuit. By using the active biasing technique for the base of the HBT, the 1-dB compression point (P1dB) can be extended. Compared with the resistor feed circuit, more than 8 dB improvement in P1dB is achieved with the active feed circuit. The measured input P1dB and IP3 arc -12.3 dBm and -0.5 dBm, respectively. This LNA is packaged in a QFN package and dissipates 6.4 mA from a 2.7 V supply.
Sponsorship	Ind. Technol. Res. Inst., Taiwan
Starting Page	153
Ending Page	156
File Size	672357
Page Count	4
File Format	PDF
ISBN	0780390601
DOI	10.1109/VDAT.2005.1500043
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Linearity Low-noise amplifiers Silicon germanium Germanium silicon alloys BiCMOS integrated circuits Multiaccess communication Feeds Resistors Packaging Integrated circuit technology
Content Type	Text
Resource Type	Article

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