NDLI: Study of silicon quantum dot p-n or p-i-n junction devices on c-Si substrate

Content Provider	IEEE Xplore Digital Library
Author	Sangwook Park Eunchel Cho Xiaojing Hao Conibeer, G. Green, M.A.
Copyright Year	2008
Description	Author affiliation: Appl. Technol. Res. Dept., Hyundai Heavy Ind. (Eunchel Cho) \|\| ARC Photovoltaics Centre of Excellence, Univ. of New South Wales, Sydney, NSW (Sangwook Park; Xiaojing Hao; Conibeer, G.; Green, M.A.)
Abstract	The tandem stack of cells is one of the promising approaches for using a full solar spectrum and improving solar cell performance. By restricting the dimensions of silicon to less than Bohr radius of bulk crystalline silicon (~5 nm), quantum confinement causes its effective bandgap to increase. Therefore silicon quantum dot superlattice can be a good candidate for realizing all silicon tandem solar cells. In this work, silicon quantum dot heteroface and p-i-n homojunction devices on crystalline silicon wafers have been fabricated to understand the electrical properties of these junctions. The conduction mechanisms were determined by analyzing the temperature dependence of the current-voltage characteristics. We have experimentally investigated the material properties of silicon (Si) quantum dot (Si QD) superlattices and fabricated the device as a first step towards silicon based tandem cells. This study indicates the silicon quantum dots can be a good candidate for all-silicon tandem solar cells.
Starting Page	316
Ending Page	319
File Size	639108
Page Count	4
File Format	PDF
ISBN	9781424427161
ISSN	10972137
DOI	10.1109/COMMAD.2008.4802155
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-28
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Quantum dots PIN photodiodes P-n junctions Photovoltaic cells Crystallization Superlattices Potential well Photonic band gap Temperature dependence third generation component silicon quantum dot tandem
Content Type	Text
Resource Type	Article

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