NDLI: Doping dependence of optical properties of solid-phase crystallized evaporated poly-Si thin films on glass

Content Provider	IEEE Xplore Digital Library
Author	Song He Sproul, A.B. Aberle, A.G.
Copyright Year	2008
Description	Author affiliation: ARC Photovoltaics Center of Excellence, The Univ. of New South Wales, Sydney, NSW (Song He; Sproul, A.B.; Aberle, A.G.)
Abstract	Boron and phosphorus doped polycrystalline silicon films with moderate and heavy doping of $~5times10^{17}cm^{-3}$ and $~1times10^{19}$ $cm^{-3}$ respectively are investigated to observe the impacts of doping on the optical properties, with "intrinsic" evaporated poly-Si films for comparison. The films are prepared by solid-phase crystallization (SPC) of evaporated amorphous silicon films on borosilicate glass. Tauc-Lorentz models with one or two oscillators are applied for the fitting of both reflection and transmission data collected by a spectrophotometer. Ultraviolet (UV) reflectance shows that the crystal quality of the films is improved by phosphorous doping, while boron has a negligible impact on the crystal quality. The refractive indices of "intrinsic' and moderately doped poly-Si films are similar to the values of crystalline silicon (c-Si), while heavy doping causes a decrease of the refractive indices for wavelengths longer than 1000 nm. The doped poly-Si films exhibit greater absorption than c-Si for visible wavelengths. This absorption is attributed to defects in the films. This "defect absorption" is greatest for the "intrinsic" and boron doped films and least for the phosphorus doped films. There is a strong correlation between the crystal quality of the films determined by UV reflectance and the enhanced absorption at visible wavelengths.
Starting Page	293
Ending Page	296
File Size	302399
Page Count	4
File Format	PDF
ISBN	9781424427161
ISSN	10972137
DOI	10.1109/COMMAD.2008.4802150
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-28
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical films Doping Crystallization Glass Semiconductor films Electromagnetic wave absorption Boron Optical refraction Optical variables control Silicon absorption coefficient Thin films solid phase crystallization evaporated poly-Si films boron phosphorous WVASE fitting Tauc-Lorentz model refractive index
Content Type	Text
Resource Type	Article

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