NDLI: Study of the radiation hardness of irradiated AToM front-end chips of the BaBar silicon vertex tracker

Content Provider	IEEE Xplore Digital Library
Author	Bettarini, S. Bondioli, M. Bosisio, L. Calderini, G. Dittongo, S. Forti, F. Giorgi, M.A.
Copyright Year	2004
Description	Author affiliation: Ist. Nazionale di Fisica Nucl., Pisa, Italy (Bettarini, S.; Bondioli, M.)
Abstract	The radiation hardness of the AToM chips of the BaBar silicon vertex tracker has been investigated by means of irradiations with photons from a Co60 source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the amplifier have been measured as a function of the applied capacitive load and the absorbed dose. Different beam intensities have been used to study the effect of different dose rates to the AToM radiation damage. The chip digital functionalities have been tested up to a dose of 5.5 Mrads for the Co60 photons and 9 Mrads for the 0.9 GeV electrons. In addition a pedestal shift for the irradiated channels has been observed in the test with electrons but is not present in the irradiation with photons. This effect reproduces qualitatively the behavior observed since 2002 in the front-end electronics of the installed BaBar silicon vertex tracker. After some investigation of the chip layout, this peculiar behavior could be associated to radiation damage in a well-identified component of the AToM. The results of the radiation tests are presented and used to extrapolate the performance and lifetime of the installed detector in the next few years.
Starting Page	1994
Ending Page	1998
File Size	1344799
Page Count	5
File Format	PDF
ISBN	0780387007
ISSN	10823654
e-ISBN	0780387015
DOI	10.1109/NSSMIC.2004.1462637
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-16
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic measurements Silicon Electrons Semiconductor device measurement Noise measurement Gain measurement Electronic equipment testing Performance evaluation Optoelectronic and photonic sensors Atomic beams
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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