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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zheng Li |
| Copyright Year | 2000 |
| Description | Author affiliation: Brookhaven Nat. Lab., Upton, NY, USA (Zheng Li) |
| Abstract | Two-dimensional simulations of the electrical properties of Si microstrip detectors various strip width/pitch configurations have been systematically performed using a processing and device simulation tool. It has been found that the detector full depletion voltage (V/sub fd/) depends greatly on the ratios of strip width (W) to pitch (P) and pitch to detector thickness (d). The value of V/sub fd/ increases with the decreasing ratio of W/P: V/sub fd/ for W/P=0.1 (P=100 m) is almost twice of that of a bulk detector (W/P=1) for different bulk resistivities (simulation of before and after radiation). The increasing rate of V/sub fd/ with decreasing W/P is much higher when W/P<9.3. It has also been found that, for a given strip width, the strip pitch should be kept smaller than the sum of detector thickness and strip width, i.e. P |
| File Size | 723375 |
| File Format | |
| ISBN | 0780365038 |
| ISSN | 10823654 |
| DOI | 10.1109/NSSMIC.2000.949006 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-10-15 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electric potential Microstrip Strips Radiation detectors Silicon radiation detectors Voltage Conductivity Sputtering Large Hadron Collider Degradation |
| Content Type | Text |
| Resource Type | Article |
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