NDLI: A novel protection technique devoted to the improvement of the short circuit ruggedness of IGBTs

Content Provider	IEEE Xplore Digital Library
Author	Musumeci, S. Pagano, R. Raciti, A. Belverde, G. Guastella, C. Melito, M.
Copyright Year	2003
Description	Author affiliation: DIEES-ARIEL, Catania Univ., Italy (Musumeci, S.; Pagano, R.; Raciti, A.)
Abstract	This paper deals with a novel short circuit protection technique that is applied during fault under load (FUL) conditions occurring on IGBT devices. An experimental analysis of rugged IGBTs, which are submitted to FUL transients, has been performed dwelling upon the main stresses associated with the fault. In particular, the issues pertinent to the current transient are analysed, and the state-of-the-art regarding the protection circuit as appearing in literature is recalled and discussed. A novel circuitry is proposed aiming to strongly limit the peak of current deriving from a FUL transient, thus limiting the considerable energetic and thermal stresses onto the device. Besides, a theoretical analysis explaining the working mechanism of the proposed circuit has been carried out. Finally, the experimental results, which have been obtained by exploiting a suitable breadboard able to create FUL transients, confirm the validity and correctness of the proposed approach.
Sponsorship	IEEE Industrial Electronics Soc
Starting Page	1733
Ending Page	1738
File Size	444871
Page Count	6
File Format	PDF
ISBN	0780379063
DOI	10.1109/IECON.2003.1280319
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Circuit faults Thermal stresses Voltage Transient analysis Performance analysis Power system protection Thermal resistance Circuit testing Capacitance
Content Type	Text
Resource Type	Article

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