NDLI: An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics

Content Provider	IEEE Xplore Digital Library
Author	Jung Gil Yang Munho Kim Kyounghoon Yang
Copyright Year	2009
Description	Author affiliation: Division of Electrical Engineering, School of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea (Jung Gil Yang; Munho Kim; Kyounghoon Yang)
Abstract	A high-isolation broadband travelingwave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 × 0.8 $mm^{2}$ including pads has been achieved by using the meandered microstrip lines.
Starting Page	207
Ending Page	209
File Size	1419981
Page Count	3
File Format	PDF
ISBN	9781424434329
ISSN	10928669
DOI	10.1109/ICIPRM.2009.5012480
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Indium gallium arsenide Power transmission lines Distributed parameter circuits Frequency Communication switching MMICs Impedance Shunt (electrical) Circuit synthesis switch component InGaAs PIN diode artificial transmission line MMIC
Content Type	Text
Resource Type	Article

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