NDLI: Metamorphic HEMT technology for low-noise applications

Content Provider	IEEE Xplore Digital Library
Author	Leuther, A. Tessmann, A. Kallfass, I. Losch, R. Seelmann-Eggebert, M. Wadefalk, N. Schafer, F. Gallego Puyol, J.D. Schlechtweg, M. Mikulla, M. Ambacher, O.
Copyright Year	2009
Description	Author affiliation: Centro Astronomico de Yebes, Observatorio Astronomico Nacional Spain (Gallego Puyol, J.D.) \|\| Fraunhofer Institute for Applied Solid-State Physics IAF, 79108 Freiburg, Germany (Leuther, A.; Tessmann, A.; Kallfass, I.; Losch, R.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.) \|\| Chalmers University of Technology, Sweden (Wadefalk, N.) \|\| Max-Planck-Institut fur Radioastronomie, Germany (Schafer, F.)
Abstract	Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic ƒT of 220 / 375 GHz and an extrinsic transconduction gm, max of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 µm mHEMTs were integrated in hybrid 4 – 8 GHz (Chalmers) and 16 – 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.
Starting Page	188
Ending Page	191
File Size	671772
Page Count	4
File Format	PDF
ISBN	9781424434329
ISSN	10928669
DOI	10.1109/ICIPRM.2009.5012475
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	mHEMTs Temperature Low-noise amplifiers HEMTs MODFETs MMICs Noise figure Frequency measurement Gain measurement Noise measurement
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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