NDLI: Improved Emission Wavelength Reproducibiliy of InP-Based All Movpe Grown 1.55 μm Quantum Dot Lasers

Content Provider	IEEE Xplore Digital Library
Author	Franke, D. Harde, P. Boettcher, J. Moehrle, M. Sigmund, A. Kuenzel, H.
Copyright Year	2007
Description	Author affiliation: Heinrich-Hertz-Inst., Berlin (Franke, D.; Harde, P.; Boettcher, J.; Moehrle, M.; Sigmund, A.; Kuenzel, H.)
Abstract	InAs quantum dots (QD) on InP emitting at 1.55 μm grown by using conventional MOVPE sources were investigated. Aiming at their implementation in 1.55 μm laser structures thermal stability of the QDs during growth of the upper cladding layer was found to be a severe problem most probably due to movement of growth constituents resulting in a marked blue-shift of the emission. This shift was systematically investigated using thermal treatment to simulate cladding growth. The strong dependence of the blue-shift on growth temperature $(T_{g})$ of the QDs is believed to be due to defects being incorporated during GalnAsP matrix deposition. The cause for the defects is assumed to be incomplete decomposition of the $PH_{3}$ or reduced surface diffusion length at low $T_{g}$ which support interdiffusion. Above $T_{g}$ = 510°C stable emission from the QDs independent of regrowth temperature in this range was observed. Application of a QD deposition temperature of 500°C results in laser structures with a QD density of $5-10^{10}$ $cm^{-2}.$ Excellent laser material quality characterized by $J_{th}$ ≪ 100 $A/cm^{2}$ per QD layer was achieved.
Starting Page	559
Ending Page	562
File Size	3979591
Page Count	4
File Format	PDF
ISBN	1424408741
ISSN	10928669
DOI	10.1109/ICIPRM.2007.381252
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dot lasers Epitaxial growth Epitaxial layers Surface emitting lasers Laser stability Indium phosphide Thermal stability Temperature dependence Matrix decomposition Temperature distribution
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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