NDLI: DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

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DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

Content Provider	IEEE Xplore Digital Library
Author	Jae Yeob Shim Hyung Sup Yoon Dong Min Kang Ju Yeon Hong Kyung Ho Lee
Copyright Year	2007
Description	Author affiliation: Electron. & Telecommun. Res. Inst., Daejeon (Jae Yeob Shim; Hyung Sup Yoon; Dong Min Kang; Ju Yeon Hong; Kyung Ho Lee)
Abstract	In this paper T-gate metamorphic high electron mobility transistors with 60 nm gate length has been developed using T-gate lithography process. Electron beam lithography was used to define 60 nm gate using ZEP single layer on SiN layer, which is used to fabricate structurally stable T-gate HEMTs. The SiN layer was then etched over 130% of the layer thickness for enhancing yield using reactive ion etching, followed by second electron beam lithography process. DC and RF performances of 60 nm T-gate MHEMTs were characterized.
Starting Page	445
Ending Page	446
File Size	492909
Page Count	2
File Format	PDF
ISBN	1424408741
ISSN	10928669
DOI	10.1109/ICIPRM.2007.381221
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency mHEMTs Indium Silicon compounds Lithography Etching HEMTs MODFETs Gallium arsenide Molecular beam epitaxial growth
Content Type	Text
Resource Type	Article

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