NDLI: InAs Quantum Dots Grown on Selective Areas with a Metal Mask for Photonic-Crystal-Based Ultra-Small and Ultra-Fast All Optical Devices

Content Provider	IEEE Xplore Digital Library
Author	Ozaki, N. Takata, Y. Ohkouchi, S. Sugimoto, Y. Ikeda, N. Watanabe, Y. Kitagawa, Y. Mizutani, A. Asakawa, K.
Copyright Year	2007
Description	Author affiliation: Univ. of Tsukuba, Tsukuba (Ozaki, N.; Takata, Y.)
Abstract	A metal-mask (MM) method for selective-area-growth (SAG) of self-assembled InAs quantum dots (QDs) on a GaAs substrate was developed for applications of ultra-small and ultra-fast all optical devices based on a combination of QD and photonic crystal waveguides (PC-WGs). Successful SAG of QDs with high density and high optical quality comparable to conventional InAs-QDs grown without the MM was confirmed by atomic force microscopy and photoluminescence (PL) measurements. The QD density was $4times10^{10}$ $cm^{-2}$ and FWHM of the PL emission was around 30 meV at room temperature. By insertion of a strain-reducing layer on the QD, the PL peak wavelength was controlled from 1240 nm to 1320 nm. The MM method is promising for realizing the PC-based all optical devices, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.
Starting Page	493
Ending Page	496
File Size	3667996
Page Count	4
File Format	PDF
ISBN	1424408741
ISSN	10928669
DOI	10.1109/ICIPRM.2007.381235
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-14
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dots Optical devices Optical waveguides Atom optics Atomic measurements Atomic force microscopy Force measurement Optical microscopy Gallium arsenide Photonic crystals
Content Type	Text
Resource Type	Article

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