NDLI: Fabrication and characterization of 0.2 to 6 /spl mu/m GaInAs/InP electron waveguides

Content Provider	IEEE Xplore Digital Library
Author	Maximov, I. Wang, Q. Graczyk, M. Omling, P. Samuelson, L. Seifert, W. Shorubalko, I. Hieke, K. Lourdudoss, S. Messmer, E.R.
Copyright Year	1999
Description	Author affiliation: Dept. of Solid State Phys., Lund Univ., Sweden (Maximov, I.)
Abstract	We demonstrate fabrication technology and characterization results of GaInAs/InP electron waveguides with lengths between 0.2 and 6 /spl mu/m. The waveguides, 50 to 100 nm wide, are produced by deep wet etching of high mobility 2DEG MOVPE-grown G/sub 0.25/In/sub 0.75/As/InP structures. The waveguide structures are defined by electron beam lithography and a nonselective etching in either HCl:CH/sub 3/COOH:H/sub 2/O/sub 2/ or HBr-based solutions. A 250 nm-thick ZEP520 electron beam resist is used as an etch mask after a post-development baking at 120/spl deg/C to enhance its adhesion to the substrate. After etching, the structures were regrown by nominally undoped InP layer in a low-pressure MOVPE process or by Fe-doped InP in an atmospheric pressure hydride vapor phase epitaxy (HVPE). The Fermi energy is controlled by applying voltage to resist-insulated top gate or side gates. A well defined quantized conductance at 0.3 K of heterostructurally-defined electron waveguides with length of up to 3 /spl mu/m is demonstrated.
Starting Page	237
Ending Page	240
File Size	406421
Page Count	4
File Format	PDF
ISBN	0780355628
ISSN	10928669
DOI	10.1109/ICIPRM.1999.773679
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-16
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Electron beams Epitaxial growth Optical device fabrication Wet etching Lithography Resists Adhesives Substrates Epitaxial layers
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Fabrication of 0.1/spl mu/m-gate InP HEMTs using i-line lithography

Fabrication and characterization of a regrown InP/GaInAs quantum point contact

Successful utilization of CH/sub 4//H/sub 2/ RIE for the fabrication of 1.3 /spl mu/m InGaAsP/InP integrated laser with butt-coupled passive waveguides

Monolithically integrated 4/spl times/4 InGaAsP/InP laser amplifier gate switch arrays

The fabrication of grating for 1.55 /spl mu/m InGaAsP DFB laser array by e-beam lithography

In situ selective area etching and MOVPE regrowth of GaInAs-InP on InP substrates

A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 /spl mu/m

Growth of InP on patterned substrates using AP-MOVPE

1.55 /spl mu/m complex-coupled DFB lasers with quaternary overgrown gratings

Fabrication and characterization of 0.2 to 6 /spl mu/m GaInAs/InP electron waveguides

Similar Documents

Fabrication of 0.1/spl mu/m-gate InP HEMTs using i-line lithography

Fabrication and characterization of a regrown InP/GaInAs quantum point contact

Successful utilization of CH/sub 4//H/sub 2/ RIE for the fabrication of 1.3 /spl mu/m InGaAsP/InP integrated laser with butt-coupled passive waveguides

Monolithically integrated 4/spl times/4 InGaAsP/InP laser amplifier gate switch arrays

The fabrication of grating for 1.55 /spl mu/m InGaAsP DFB laser array by e-beam lithography

In situ selective area etching and MOVPE regrowth of GaInAs-InP on InP substrates

A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 /spl mu/m

Growth of InP on patterned substrates using AP-MOVPE

1.55 /spl mu/m complex-coupled DFB lasers with quaternary overgrown gratings

Fabrication and characterization of 0.2 to 6 /spl mu/m GaInAs/InP electron waveguides