NDLI: InP/GaAsSb/InP double heterojunction bipolar transistors with high cut-off frequencies and breakdown voltages

Content Provider	IEEE Xplore Digital Library
Author	Matine, N. Dvorak, M.W. Xu, X.G. Watkins, S.P. Bolognesi, C.R.
Copyright Year	1999
Description	Author affiliation: Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada (Matine, N.)
Abstract	In this work, we report on the DC and microwave performance of MOCVD-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs) with various collector thicknesses. The cut-off frequencies (and breakdown voltages) are 106 GHz (8 V), 82 GHz (10 V) and 40 GHz (15 V) for the 2000 /spl Aring/, 3000 /spl Aring/ and 5000 /spl Aring/, lightly doped collectors. The 106 GHz, which is the best f/sub T/ ever reported in this material system, is obtained while maintaining a relatively high breakdown voltage (BV/sub CEO/=8 V). The lower cut-off frequencies obtained for the 3000 /spl Aring/ and 5000 /spl Aring/, collectors are attributed to the longer transit time in the collector and also to the Kirk like limitation brought about by high current densities in the thicker collectors.
Starting Page	179
Ending Page	182
File Size	295483
Page Count	4
File Format	PDF
ISBN	0780355628
ISSN	10928669
DOI	10.1109/ICIPRM.1999.773663
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-16
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Double heterojunction bipolar transistors Cutoff frequency Electric breakdown Photonic band gap Low voltage Breakdown voltage Microwave transistors Doping Electron emission
Content Type	Text
Resource Type	Article

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