NDLI: Omnidirectional reflector using a low refractive index material

Content Provider	IEEE Xplore Digital Library
Author	Xi, J.Q. Ojha, M. Woojin Cho Gessmann, T. Schubert, E.F. Plawsky, J.L. Gill, W.N.
Copyright Year	2004
Description	Author affiliation: Future Chip Constellation, Rensselaer Polytech. Inst., Troy, NY, USA (Xi, J.Q.)
Abstract	Triple-layer omni-directional reflectors (ODRs) consisting of a semiconductor, a transparent quarter-wavelength dielectric layer and metal layer have high reflectivities at all angles of incidence. In this paper, triple-layer ODRs are demonstrated that incorporate nanoporous SiO/sub 2/, a novel low-refractive-index (low-n) material with refractive indices n /spl Lt/ 1.46 as well as dense SiO/sub 2/ (n = 1.46). GaP and Ag serve as the semiconductor and metal layer materials, respectively. An angle-integrated transverse electric (TE) mode reflectivity of R/sub avg/\|/sub TE/ = 99.9 % and transverse magnetic (TM) mode reflectivity R/sub avg/\|/sub TM/ = 98.9 % are calculated for the triple-layer ODRs employing nanoporous SiO/sub 2/. Reflectivity measurements, including the angular dependence of R, are presented. Novel hybrid ODRs consisting of semiconductor, a several micron thick low-n dielectric material layer, a distributed Bragg reflector (DBR) and metal layer have outstanding reflectivities for all incident angles. GaP and Ag serve as the semiconductor and metal layer, respectively. Nanoporous SiO/sub 2/ is used as the low-n material. TiO/sub 2/ and dense SiO/sub 2/ serve as the DBR materials. The angle-intergrated reflectivities of the TE and TM modes are calculated to be larger than 99.9% for the hybrid ODRs. The results indicate the great potential of the ODRs for light-emitting diodes with high light extraction efficiency.
Starting Page	102
Ending Page	107
File Size	1539977
Page Count	6
File Format	PDF
ISBN	981256196X
DOI	10.1109/LECHPD.2004.1549679
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Refractive index Nanoporous materials Reflectivity Semiconductor materials Dielectric materials Tellurium Distributed Bragg reflectors Inorganic materials Magnetic materials Magnetic semiconductors
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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