NDLI: Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodes

Content Provider	IEEE Xplore Digital Library
Author	Luukanen, A. Grossman, E.N. Moyer, H.P. Schulman, J.N.
Copyright Year	2004
Description	Author affiliation: National Inst. of Stand. & Technol., Boulder, CO, USA (Luukanen, A.; Grossman, E.N.)
Abstract	The Sb-heterostructure quantum tunneling diode, fabricated from epitaxial layers of InAs and AlGaSb, is a recently proposed device for direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high curvature in the current-voltage characteristic that produces the rectification or mixing without bias. Operation without bias is a highly desirable feature as the device does not suffer from large 1/f noise, a major shortcoming in other devices such as Schottky barrier diodes or resistive room temperature bolometers. In this paper we present the noise characteristics of the diode as a function of the bias voltage. At room temperature and zero bias, the device demonstrates a Johnson noise limited intrinsic noise equivalent power of 1 pW/Hz/sup 1/2 /. In addition to the noise measurements, we present the detection characteristics of the diode at a frequency of 2.5 THz. The measured THz laser response deviates from conventional theoretical prediction based on pure rectification. The reasons for the discrepancy will be discussed.
Starting Page	40
Ending Page	45
File Size	1323089
Page Count	6
File Format	PDF
ISBN	981256196X
DOI	10.1109/LECHPD.2004.1549669
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Schottky diodes Acoustical engineering Temperature Epitaxial layers Current-voltage characteristics Schottky barriers Bolometers Voltage Noise measurement
Content Type	Text
Resource Type	Article

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